Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature
نویسندگان
چکیده
منابع مشابه
Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs
Modelling of the increase of MOSFET transwnductance produced by electron-velocity overshoot as channel lengths are reduced has been performed at low temperature. The results obtained have been compared to room-temperature ones. To accomplish this, the charge-control model has been used to obtain a simple analytical expression to account for electron-velocity overshoot effects on the performance...
متن کاملScaling Effects on Thermal and Gate Induced Noise of Small Geometry LDD Mosfets
An analytical model is developed to study the impact of scaling on the thermal and gate induced noise of the small geometry LDD MOSFETs. The analyses includes the short channel, narrow width, velocity saturation, hot carrier and LDD effects. The intricacy in analysis when considering all these effects simultaneously as in the small geometry devices is overcomed and a generalized expression vali...
متن کاملLow Voltage Squarer Using Floating Gate MOSFETs
A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS tec...
متن کاملThe Effect of Gate Length on SOI-MOSFETs Operation
The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increas...
متن کاملGate dielectrics for deep sub-0.1 μm CMOS
Recent rapid progress of information technology owes very much to that of semiconductor technologies, especially to that of CMOS. However, the downsizing of CMOS devices is now facing severe difficulties for sub-0.1 μm generations because of various expected limitations. For, example, SiO2 has been used almost exclusively as the material for the gate insulator since the first realization of the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1994
ISSN: 1155-4339
DOI: 10.1051/jp4:1994602